rtq045n03 ROHM Co. Ltd., rtq045n03 Datasheet

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rtq045n03

Manufacturer Part Number
rtq045n03
Description
2.5v Drive Nch Mos Fet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistors
2.5V Drive Nch MOS FET
RTQ045N03
Silicon N-channel
MOS FET
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6) .
Power switching, DC / DC converter.
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Channel to ambient
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
∗ Mounted on a ceramic board.
Type
RTQ045N03
Structure
Features
Packaging specifications
Thermal resistance
Application
Absolute maximum ratings (Ta=25°C)
Parameter
Parameter
Package
Code
Basic ordering unit (pieces)
Continuous
Pulsed
Continuous
Pulsed
Taping
3000
TR
Symbol
V
V
Tstg
Tch
I
I
P
Rth (ch-a)
DSS
GSS
I
DP
I
SP
D
S
D
Symbol
∗1
∗1
∗2
−55~+150
Limits
±4.5
1.25
150
±18
1.0
4.0
30
12
Limits
100
Unit
°C
°C
W
V
V
A
A
A
A
External dimensions (Unit : mm)
TSMT6
°C / W
Unit
1pin mark
(6)
Abbreviated symbol : QM
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
0.95
(1)
Equivalent circuit
(6)
(1)
(5)
2.9
1.9
0.4
0.95
(2)
(4)
(3)
Each lead has same dimensions
(5)
(2)
1.0MAX
∗2
0.16
0.85
0.7
0 ~ 0.1
RTQ045N03
∗1
Rev.C
(4)
(3)
(6)
(1)
(5)
(2)
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
(4)
(3)
1/3

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rtq045n03 Summary of contents

Page 1

... V ±4 ∗1 ± ∗1 4 ∗2 1. °C 150 −55~+150 °C Symbol Limits Unit ∗ ° 100 RTQ045N03 1.0MAX 2.9 0.85 1.9 0.95 0.95 0.7 (6) (5) ( 0.1 (1) (2) (3) 1pin mark 0.16 0.4 Each lead has same dimensions Abbreviated symbol : QM Equivalent circuit (6) (5) (4) (6) ∗2 (1) ∗1 (1) ...

Page 2

... R L ∗ − − =10Ω ∗ − 7.6 10 ∗ − − =4.5V 1 ∗ − − =4.5A 2 Min. Typ. Max. Unit ∗ − − =4A RTQ045N03 Conditions =0V DS =0V GS =0V GS =1mA D =4.5V GS =4V GS =2.5V GS =10V DS 15V DD 15V Conditions =0V GS Rev.C 2/3 ...

Page 3

... Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1000 V GS Ta=125°C Pulsed Ta=75°C Ta=25°C Ta= −25°C 100 0.1 1 DRAIN CURRENT : I (A) D Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) RTQ045N03 5 Ta=25°C =15V 4 =4. =10Ω Pulsed 3.5 3 2.5 2 1.5 1 0.5 0 ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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