fqaf85n06 Fairchild Semiconductor, fqaf85n06 Datasheet

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fqaf85n06

Manufacturer Part Number
fqaf85n06
Description
60v N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

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FQAF85N06
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Part Number:
FQAF85N06
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©2001 Fairchild Semiconductor Corporation
FQAF85N06
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
D
S
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25° C)
Parameter
T
C
FQAF Series
C
C
= 25°C unless otherwise noted
TO-3PF
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 67A, 60V, R
• Low gate charge ( typical 86 nC)
• Low Crss ( typical 165 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 C maximum junction temperature rating
G


DS(on)
Typ
--
--
 
 
FQAF85N06
= 0.010
-55 to +175




S
D






47.4
0.67
268
810
100
300
7.0
60
67
67
10
25
@V
Max
1.5
40
GS
Q F E T
= 10 V
May 2001
Units
W/°C
Units
°C/W
°C/W
V/ns
Rev. A1. May 2001
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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fqaf85n06 Summary of contents

Page 1

... C (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) = 25° Parameter May 2001 0.010 @ DS(on FQAF85N06 Units 60 67 47.4 268 25 810 7.0 V/ns 100 0.67 W/°C -55 to +175 300 Typ Max Units -- 1.5 °C °C/W Rev. A1. May 2001 ...

Page 2

... 85A, di/dt  300A DSS, 4. Pulse Test : Pulse width  300 s, Duty cycle  2% 5. Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25°C D ...

Page 3

... Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 8000 6000 C oss C iss 4000 C 2000 rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation 175  Figure 2. Transfer Characteristics 175   Note : T = 25 J ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 2.5 2.0 1.5 1.0  Notes : 0.5 = 250  0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type ...

Page 7

... Package Dimensions 2.00 0.20 2.00 0.20 4.00 0.20 +0.20 0.75 –0.10 5.45TYP [5.45 ] 0.30 ©2001 Fairchild Semiconductor Corporation TO-3PF 15.50 ø3.60 0.20 0.20 2.00 0.20 5.45TYP [5.45 ] 0.30 5.50 0.20 3.00 0.20 (1.50) 0.85 0.03 2.00 0.20 3.30 0.20 +0.20 0.90 –0.10 Rev. A1. May 2001 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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