fqaf85n06 Fairchild Semiconductor, fqaf85n06 Datasheet
fqaf85n06
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fqaf85n06 Summary of contents
Page 1
... C (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) = 25° Parameter May 2001 0.010 @ DS(on FQAF85N06 Units 60 67 47.4 268 25 810 7.0 V/ns 100 0.67 W/°C -55 to +175 300 Typ Max Units -- 1.5 °C °C/W Rev. A1. May 2001 ...
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... 85A, di/dt 300A DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 2% 5. Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25°C D ...
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... Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 8000 6000 C oss C iss 4000 C 2000 rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation 175 Figure 2. Transfer Characteristics 175 Note : T = 25 J ...
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... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 2.5 2.0 1.5 1.0 Notes : 0.5 = 250 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation ...
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... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...
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... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type ...
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... Package Dimensions 2.00 0.20 2.00 0.20 4.00 0.20 +0.20 0.75 –0.10 5.45TYP [5.45 ] 0.30 ©2001 Fairchild Semiconductor Corporation TO-3PF 15.50 ø3.60 0.20 0.20 2.00 0.20 5.45TYP [5.45 ] 0.30 5.50 0.20 3.00 0.20 (1.50) 0.85 0.03 2.00 0.20 3.30 0.20 +0.20 0.90 –0.10 Rev. A1. May 2001 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...