fdp46n30 Fairchild Semiconductor, fdp46n30 Datasheet

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fdp46n30

Manufacturer Part Number
fdp46n30
Description
300v N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
FDP46N30
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FDP46N30
Manufacturer:
FSC
Quantity:
20 000
©2005 Fairchild Semiconductor Corporation
FDP46N30 Rev. A
FDP46N30
300V N-Channel MOSFET
Features
• 46A, 300V, R
• Low gate charge (typical 58 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θCS
θJA
T
STG
rss
(typical 60 pF)
DS(on)
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
G
= 0.079Ω @V
D
S
GS
TO-220
FDP Series
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
= 10 V
Parameter
Parameter
C
= 25°C)
C
C
= 25°C)
= 100°C)
1
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(Note 1)
Min.
0.5
--
--
FDP46N30
-55 to +150
1205
27.6
41.7
300
184
±30
417
300
4.5
3.3
46
46
G
UniFET
 
 
Max.
0.30
62.5
--
S
D
www.fairchildsemi.com
August 2005
Unit
W/°C
V/ns
Unit
mJ
mJ
°C/W
°C/W
°C/W
°C
°C
W
A
A
A
V
A
V
TM

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fdp46n30 Summary of contents

Page 1

... R Thermal Resistance, Case-to-Sink θCS R Thermal Resistance, Junction-to-Ambient θJA ©2005 Fairchild Semiconductor Corporation FDP46N30 Rev. A Description = 10 V These N-Channel enhancement mode power field effect transis- GS tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- ...

Page 2

... ≤ 46A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP46N30 Rev. A Package Reel Size TO-220 - T = 25°C unless otherwise noted C Conditions 250µ ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 6000 C oss 4000 C iss 2000 C rss Drain-Source Voltage [V] DS FDP46N30 Rev. A Figure 2. Transfer Characteristics Notes : 1. 250 µ s Pulse Test ° Figure 4. Body Diode Forward Voltage ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FDP46N30 Rev. A (Continued) Figure 8. On-Resistance Variation * Notes : 250 A µ D 100 150 200 C] ° Figure 10. Maximum Drain Current ...

Page 5

... 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V FDP46N30 Rev. A Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V 300nF 300nF DUT DUT Resistive Switching Test Circuit & ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDP46N30 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • ...

Page 7

... Mechanical Dimensions FDP46N30 Rev. A TO-220 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDP46N30 Rev. A ISOPLANAR™ PowerSaver™ LittleFET™ PowerTrench MICROCOUPLER™ QFET MicroFET™ QS™ MicroPak™ ...

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