fqb9n30 Fairchild Semiconductor, fqb9n30 Datasheet

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fqb9n30

Manufacturer Part Number
fqb9n30
Description
300v N-channel Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
©2000 Fairchild Semiconductor International
FQB9N30 / FQI9N30
300V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
FQB Series
D
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
Parameter
Parameter
= 25°C) *
= 25°C)
G
D
T
S
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 9.0A, 300V, R
• Low gate charge ( typical 17 nC)
• Low Crss ( typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQI Series
I
2
-PAK
FQB9N30 / FQI9N30
DS(on)
Typ
--
--
--
-55 to +150
= 0.45
3.13
0.78
420
300
300
9.0
5.7
9.0
9.8
4.5
36
98
30
G
@V


Max
1.28
62.5
40
GS
QFET
QFET
QFET
QFET
 
 
= 10 V




S
D






May 2000
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
Rev. A, May 2000
°C
°C
W
W
V
A
A
A
V
A
TM

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fqb9n30 Summary of contents

Page 1

... C (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) = 25° 25°C) C Parameter May 2000 QFET QFET QFET QFET = 0. DS(on FQB9N30 / FQI9N30 Units 300 V 9 420 mJ 9.0 A 9.8 mJ 4.5 V/ns 3. 0.78 W/°C -55 to +150 °C 300 °C Typ Max Units -- 1.28 °C °C ...

Page 2

... V = 50V 9.0A, di/dt  200A DSS, 4. Pulse Test : Pulse width  300 s, Duty cycle  2% 5. Essentially independent of operating temperature ©2000 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° ...

Page 3

... Drain Current and Gate Voltage 1200 1000 C iss 800 C oss 600 400 C rss 200 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor International Notes : 1. 250 s Pulse Test 25 Figure 2. Transfer Characteristics 10V GS V ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2000 Fairchild Semiconductor International (Continued) 3.0 2.5 2.0 1.5 1.0  Notes : 0.5 = 250  0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2000 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2000 Fairchild Semiconductor International + + DUT DUT Driver Driver Same Type Same Type ...

Page 7

... Package Dimensions 9.90 0.20 1.27 0.10 2.54 TYP 10.00 ©2000 Fairchild Semiconductor International 2 D PAK 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 0.10 0.15 2.40 0.20 +0.10 0.50 –0.05 10.00 0.20 (8.00) (4.40) (2XR0.45) 0.80 0.10 Rev. A, May 2000 ...

Page 8

... Package Dimensions (Continued) 9.90 1.27 0.10 2.54 TYP 10.00 ©2000 Fairchild Semiconductor International 2 I PAK 0.20 1.47 0.10 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 –0.05 0.20 Rev. A, May 2000 ...

Page 9

TRADEMARKS DISCLAIMER LIFE SUPPORT POLICY PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition ...

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