mtd12n06ezl ON Semiconductor, mtd12n06ezl Datasheet - Page 3

• Manufacturer Part Number: mtd12n06ezl
• Description: Tmos Power Fet 12 Amperes 60 Volts
• Manufacturer: ON Semiconductor

Motorola TMOS Power MOSFET Transistor Device Data
0.15
0.13
0.11
0.09
0.07
0.05
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
12
24
18
6
0
1
0
− 50
0
0
Figure 3. On−Resistance versus Drain Current
V
I
T
D
V
GS
J
GS
= 12 A
Figure 5. On−Resistance Variation with
− 25
= 25 C
Figure 1. On−Region Characteristics
= 5 V
= 5 V
0.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
6
0
J
, JUNCTION TEMPERATURE ( C)
I
V
D
GS
, DRAIN CURRENT (AMPS)
and Temperature
8 V
1
= 10 V
25
Temperature
T
J
= 100 C
− 55 C
25 C
1.5
12
50
6 V
TYPICAL ELECTRICAL CHARACTERISTICS
75
2
7 V
100
18
2.5
125
5 V
4 V
24
150
3
0.096
0.092
0.088
0.084
0.08
100
12
24
18
10
6
0
1
2
0
0
Figure 4. On−Resistance versus Drain Current
V
T
V
DS
J
GS
= 25 C
2.5
= 0 V
Figure 6. Drain−To−Source Leakage
10 V
10
Figure 2. Transfer Characteristics
V
V
DS
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
6
3
Current versus Voltage
I
D
, DRAIN CURRENT (AMPS)
20
and Gate Voltage
3.5
V
GS
T
25 C
J
30
= 10 V
15 V
4
12
= 125 C
100 C
T
J
= − 55 C
4.5
40
100 C
18
5
50
25 C
5.5
3
60
24
6