sir428dp Vishay, sir428dp Datasheet - Page 4

• Manufacturer Part Number: sir428dp
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

SiR428DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.4
- 0.7
- 1.0
0.001
0.01
0.5
0.2
100
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
J
- Source-to-Drain Voltage (V)
Threshold Voltage
T
= 150 °C
0.4
J
25
- Temperature (°C)
50
0.6
I
75
D
= 250 µA
0.8
0.01
100
0.1
T
10
100
J
1
0.01
I
= 25 °C
D
Limited by R
= 5 mA
* V
Safe Operating Area, Junction-to-Ambient
1.0
125
GS
> minimum V
V
150
Single Pulse
0.1
DS(on)
1.2
T
DS
A
= 25 °C
- Drain-to-Source Voltage (V)
*
GS
at which R
1
BVDSS Limited
0.030
0.024
0.018
0.012
0.006
0.000
DS(on)
200
160
120
80
40
10
0
0
0 .
0
is specified
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
1 ms
10 ms
1 s
100 ms
10 s
DC
2
V
0.01
100
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
5
S09-1093-Rev. A, 15-Jun-09
Document Number: 64987
6
7
1
T
I
T
D
J
J
8
= 10 A
= 125 °C
= 25 °C
9
10
1
0