gt35mr21 TOSHIBA Semiconductor CORPORATION, gt35mr21 Datasheet - Page 2

• Manufacturer Part Number: gt35mr21
• Description: Discrete Igbts Silicon N-channel Igbt
• Manufacturer: TOSHIBA Semiconductor CORPORATION

4. 4. 4. 4. Absolute Maximum Ratings (Note) (T
5. 5. 5. 5. Thermal Characteristics
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Thermal Characteristics
Thermal Characteristics
Absolute Maximum Ratings (Note) (T
Thermal Characteristics
Note:
Note 1: Ensure that the junction temperature does not exceed 150.
Collector-emitter voltage
Gate-emitter voltage
Collector current (DC)
Collector current (1 ms)
Diode forward current (DC)
Diode forward current (100 µs)
Collector power dissipation
Junction temperature
Storage temperature
Mounting torque
Junction-to-case thermal resistance
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher
temperature.
In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a device, it leads
to thermorunaway and results in destruction.
Therefore, please design heat release of a device with due consideration to the temperature rise of IGBT.
Characteristics
Characteristics
(T
c
= 25)
a a a a
= 25
= 25
= 25
= 25    , unless otherwise specified)
2
, unless otherwise specified)
, unless otherwise specified)
, unless otherwise specified)
(Note 1)
Symbol
Symbol
R
V
V
TOR
T
I
I
P
th(j-c)
CES
GES
I
CP
I
T
FP
C
stg
F
C
j
-55 to 150
Rating
1.52
Max
900
±25
100
150
0.6
35
20
80
82
GT35MR21
2011-06-10
Rev.1.0
Nm
/W
Unit
Unit
W

V
A