gt30j322 TOSHIBA Semiconductor CORPORATION, gt30j322 Datasheet - Page 2

• Manufacturer Part Number: gt30j322
• Description: Toshiba Insulated Gate Bipolar Transistor Silicon N Channel Igbt
• Manufacturer: TOSHIBA Semiconductor CORPORATION

ELECTRICAL CHARACTERISTICS
Gate Leakage Current
Collector Cut−Off Current
Gate−Emitter Cut−Off Voltage
Collector−Emitter Saturation Voltage
Input Capacitance
Switching Time
Peak Forward Voltage
Reverse Recovery Time
Thermal Resistance (IGBT)
Thermal Resistance (Diode)
CHARACTERISTIC
Rise Time
Turn−On Time
Fall Time
Turn−Off Time
V
SYMBOL
V
R
R
GE (OFF)
CE (sat)
I
I
C
th (j−c)
th (j−c)
GES
CES
t
t
V
t
on
off
t
t
ies
rr
r
f
F
(Ta = 25°C)
V
V
I
I
V
I
I
di / dt = −100A / μs
IGBT
Diode
C
C
F
F
GE
CE
CE
= 30A, V
= 30A, V
= 50mA, V
= 50A, V
2
= 600V, V
= 10V, V
= ±20V, V
TEST CONDITION
GE
GE
GE
CE
GE
= 0
= 0
GE
= 15V
CE
= 5V
= 0, f = 1MHz
= 0
= 0
MIN
3.0
―
―
―
―
―
―
―
―
―
―
―
―
TYP.
2500
0.20
0.30
0.25
0.40
2.1
―
―
―
―
―
―
―
GT30J322
2006-11-01
MAX
±500
0.40
1.67
2.27
1.0
6.0
2.8
2.0
0.2
―
―
―
―
°C / W
°C / W
UNIT
mA
nA
pF
μs
μs
V
V
V