sid75n12 Sirectifier Semiconductors, sid75n12 Datasheet - Page 2

• Manufacturer Part Number: sid75n12
• Description: Npt Igbt Modules
• Manufacturer: Sirectifier Semiconductors

IGBT
Inverse Diode
FWD
Thermal Characteristics
Mechanical Data
Characteristics
V
V
Symbol
R
E
R
V
V
R
F
V
F
R
R
V
CC'+EE'
on
I
CE(TO)
CE(sat)
I
th(j-c)FD
C
t
t
I
V
C
L
= V
th(j-c)D
M
GE(th)
CES
r
C
RRM
d(on)
d(off)
= V
Q
M
RRM
E
th(c-s)
th(j-c)
w
t
t
Q
E
(TO)
r
CE
(E
r
CE
(TO)
oes
r
f
res
T
ies
T
s
rr
rr
t
rr
under following conditions:
rr
off
EC
EC
)
V
V
T
V
I
under following conditions
V
res., terminal-chip T
under following conditions:
V
R
V
I
T
T
I
di/dt = 800A/us
V
I
T
T
I
di/dt = A/us
V
per IGBT
per Inverse Diode
per FWD
per module
to heatsink M6
to terminals M5
C
F
F
F
F
j
j
j
j
j
GE
GE
GE
GE
CC
GE
GE
GE
Gon
= 75A; V
= 50A; T
= 50A; V
=50A; T
= 25(125)
= 125
= 125
= 125
= 125
=100A; V
= V
= 0; V
= 15V, T
= 0, V
= 600V, I
= ± 15V
= V
= V
= R
CE
o
o
o
o
Goff
C
C
C
C
, I
j
CE
CE
j
GE
GE
= 25
GE
under following conditions:
= 25(125)
C
o
= 22 , T
C
j
= V
= 25V, f = 1MHz
C
=2mA
= 0V; T
= 0V; T
= 25(125)
= 15V; chip level
= 75A
o
C
CES
; T
C
j
j
o
= 25(125)
j
= 25(125)
= 25(125)
Conditions
C
j
= 125
= 25(125)
o
C
NPT IGBT Modules
o
C
SID75N12
o
o
o
C
C
C
o
C
min.
4.5
2.5
T
3
C
= 25
1.85(1.6)
1.4(1.6) 1.6(1.8)
2.5(3.1)
o
0.75(1)
22(30)
23(35)
27(40)
2(1.8)
C , unless otherwise specified
typ.
8(5)
380
5.5
0.1
44
56
70
18
12
3.3
0.5
0.22
28(38)
3(3.7)
max.
0.6
0.5
0.27
0.05
0.3
0.6
100
100
500
100
160
6.5
0.3
4.3
2.5
1.2
2.2
1.2
30
22
15
5
5
Units
K/W
K/W
K/W
K/W
Nm
Nm
mA
m
m
m
nH
m
mJ
uC
mJ
uC
mJ
nF
ns
ns
ns
ns
V
V
V
V
V
A
V
V
A
g