mr2a16a ETC-unknow, mr2a16a Datasheet - Page 12

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mr2a16a

Manufacturer Part Number
mr2a16a
Description
256k X 16-bit 3.3-v Asynchronous Magnetoresistive Ram
Manufacturer
ETC-unknow
Datasheet

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Timing Specifications
12
NOTES:
Write cycle time
Address set-up time
Address valid to
Address valid to end of
Byte pulse width (G high)
Byte pulse width (G low)
Data valid to end of write
Data hold time
Write recovery time
end of write (G high)
write (G low)
1. A write occurs during the overlap of E low and W low.
2. Due to product sensitivities to noise, power supplies must be properly grounded and decoupled and bus contention
3. If G goes low at the same time or after W goes low, the output will remain in a high-impedance state.
4. After W, E, or UB/LB has been brought high, the signal must remain in steady-state high for a minimum of 2 ns.
5. If both byte control signals are asserted, the two signals must have no more than 2 ns skew between them.
6. All write cycle timings are referenced from the last valid address to the first transition address.
conditions must be minimized or eliminated during read and write cycles.
Parameter
Table 12. Write Cycle Timing 3 (LB/UB Controlled; See Notes 1, 2, 3, 4, and 5)
Symbol
t
t
t
t
t
t
t
t
t
t
t
BLWH
BLWH
AVBH
AVBH
DVBH
BHDX
BHAX
BLEH
BLEH
AVAV
AVBL
Min
20
12
15
0
8
8
5
0
8
MR2A16A/D, Rev. 0.1
20
Max
Min
Timing Set
25
15
17
10
10
10
0
6
0
25
Max
Min
35
18
20
15
15
10
12
0
0
35
Max
Freescale Semiconductor
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
6

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