rf3178 RF Micro Devices, rf3178 Datasheet

rf3178

Manufacturer Part Number

rf3178

Description

Polaris? 2 Total Radio? Module

Manufacturer

RF Micro Devices

Datasheet

1.RF3178.pdf (2 pages)

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For sales or technical support, contact RFMD at 336-678-5570 or sales-support@rfmd.com.

7628 Thorndike Road, Greensboro, NC 27409-9421

RFMD

Optimum Technology Matching

RFMD’s success has been driven in part by our deep design expertise in multiple semiconductor process technologies—AlGaAs HBT, SiGe,

BiCMOS, CMOS and GaAs MESFET, as well as our newest processes, GaN, InGaP HBT and GaAs pHEMT—and our Optimum Technology

Matching

according to the best possible combi-nation of price and performance.

, POLARIS

25 GHz F T , 2 Micron, High Efficiency, High Dynamic Range,

30 GHz F T , 2 Micron, High Efficiency, High Dynamic Range,

™

TOTAL RADIO

(OTM) strategy. Through OTM, RFMD

30 GHz F T , 0.5 Micron High-Power MMIC Process

™

, andOptimum Technology Matching

25 GHz F T , 0.5 Micron, Low-Cost Process

Low Noise, High Linearity, Single Supply

Low Noise, High-Linearity, Single Supply

RF Integration and High-Performance Rx

20 GHz F T , 0.6 Micron, Low Noise,

25 GHz F T , 0.5 Micron High-Power,

47 GHz F T , Bipolar RF Technology,

Excellent for Control Components

Silicon Germanium

Excellent for High Levels of

(Switches and Attenuators)

Silicon BiCMOS

0.13

Efficient Digital Circuitry

InGaAs pHEMT

GaAs MESFET

High-Linearity Process

Silicon CMOS

InGaP HBT

GaN HEMT

GaAs HBT

Optimum Technology Matching

Micron, Low-Cost,

are trademarks of RFMD, LLC. All other trade names, trademarks and registered

Strategy

engineers match the appropriate process technology and device technology to each product

Phone 336-664-1233

Fax 336-931-7454

General Purpose Amplifiers

Modulators/Upconverters

Mixers/Downconverters

Linear CATV Amplifiers

Low Noise Amplifiers

Pre-Driver Amplifiers

Power Amplifiers

Demodulators

Transceivers

Gain Blocks

Front Ends

Chipsets

[POLARIS

™

2 TOTAL RADIO

™

Module]

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rf3178 Summary of contents

Page 1

Optimum Technology Matching GaAs HBT 25 GHz Micron, High Efficiency, High Dynamic Range, Low Noise, High Linearity, Single Supply Silicon BiCMOS 25 GHz 0.5 Micron, Low-Cost Process Silicon Germanium 47 GHz F T ...

Page 2

... GSM, GPRS and EDGE air interface standards. This solution consists of the RF6026 radio transceiver module and the RF3178 transmitter module with integrated power control, antenna switch and harmonic filters. The solution is Class 12 capable, includes enhanced receiver sensitivity and the ability to receive and transmit 8-PSK modulated signals for the EDGE air interface standard ...

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