b12-28 Advanced Semiconductor, Inc., b12-28 Datasheet

b12-28

Manufacturer Part Number

b12-28

Description

Npn Silicon Rf Power Transistor

Manufacturer

Advanced Semiconductor, Inc.

Datasheet

1.B12-28.pdf (1 pages)

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DESCRIPTION:

The

Amplifier Applications up to 250 MHz.

FEATURES:

MAXIMUM RATINGS

CHARACTERISTICS

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004

Omnigold™ Metallization System

SYMBOL

DISS

STG

Load

B12-28

= 13 dB Typical at 12 W/175 MHz

CBO

CEO

EBO

VSWR

NPN SILICON RF POWER TRANSISTOR

27 W @ T

is Designed for Class

-55

= 200 mA

= 10 mA

at Rated Conditions

6.5

= 28 V

= 30 V

= 5.0 V

= 30 V

C to +200

C to +150

3.0 A

60 V

C/W

= 25

TEST CONDITIONS

OUT

= 500 mA

= 12 W

Specifications are subject to change without notice.

Power

f = 1.0 MHz

f = 175 MHz

PACKAGE STYLE .380" 4L STUD

DIM

MINIMUM TYPICAL

ORDER CODE: ASI10801

10.8

4.0

#8-32 UNC-2A

.980 / 24.89

.450 / 11.43

.220 / 5.59

.370 / 9.40

.004 / 0.10

.320 / 8.13

.100 / 2.54

.090 / 2.29

.155 / 3.94

MINIMUM

inches / mm

.112x45°

ØC

.490 / 12.45

.750 / 19.05

MAXIMUM

.230 / 5.84

.385 / 9.78

.007 / 0.18

.330 / 8.38

.130 / 3.30

.100 / 2.54

.175 / 4.45

MAXIM

inches / mm

250

200

B12-28

UNITS

REV.A

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