fll1200iu-2 Fujitsu Microelectronics, Inc., fll1200iu-2 Datasheet
fll1200iu-2
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fll1200iu-2 Summary of contents
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... Broad Frequency Range: 1800 to 2000 MHz. • Suitable for class AB operation. DESCRIPTION The FLL1200IU 120 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers ...
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... FLL1200IU-2 L-Band Medium & High Power GaAs FET POWER DERATING CURVE 200 150 100 100 Ambient Temperature (° 12V OUTPUT POWER & add vs. INPUT POWER 12V 5. 1.96GHz 50 48 ...
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... FLL1200IU-2 48 S22 MAG ANG .929 170.6 .920 169.8 .917 168.7 .911 167.8 .907 166.9 .905 166.0 .914 164.8 .928 163.5 .940 160.2 .932 155.8 .886 151 ...
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... FLL1200IU-2 L-Band Medium & High Power GaAs FET 12-R0.5 6 4-R1.3 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ ...