ma4e1310 M/A-COM Technology Solutions, Inc., ma4e1310 Datasheet

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... Silicon Nitride Passivation • Polyimide Scratch Protection • Designed for Easy Circuit Insertion Description M/A-COM's MA4E1310 is a gallium arsenide flip chip Schottky barrier diode. This diode is fabri- cated on a OMCVD epitaxial wafer using a proc- ess designed for high device uniformity and ex- tremely low parasitics ...

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... Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Rev. V2 MA4E1310 Typ. Max. .010 .040 .045 ...

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... MA4E1310 GaAs Flip Chip Schottky Barrier Diode Forward Current vs Temperature 100.00 10.00 1.00 0.10 0.01 0.00 Operating Temperature Storage Temperature Incident LO Power Incident RF Power Mounting Temperature Electrostatic Discharge ( ESD ) Classification 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Human Body Model 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development ...

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... MA4E1310 GaAs Flip Chip Schottky Barrier Diode Handling Procedures The following precautions should be observed to avoid damaging these chips: Cleanliness: The chips should be handled in a clean environment. Do not attempt to clean die after installation. Static Sensitivity: Schottky barrier diodes are ESD sensitive and can be damaged by static electricity ...

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... PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed MA4E1310 Case Style 1278 INCHES DIM. ...