2sj556 ETC-unknow, 2sj556 Datasheet - Page 2

• Manufacturer Part Number: 2sj556
• Description: Silicon P Channel Mos Fet High Speed Power Switching
• Manufacturer: ETC-unknow

2SJ556
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current I
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Note:
Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Zero gate voltege drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage V
Body–drain diode reverse
recovery time
Note:
2
1. PW
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg
4. Pulse test
10 s, duty cycle
Symbol Min
I
I
V
R
R
|y
Ciss
Coss
Crss
t
t
t
t
t
1 %
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DS(on)
DS(on)
DF
fs
50
|
Symbol
V
V
I
I
I
E
Pch
Tch
Tstg
D
D(pulse)
DR
AP
DSS
GSS
AR
Note3
Note3
Note2
–60
±20
—
—
–1.0
—
—
18
—
—
—
—
—
—
—
—
—
Note1
Typ
—
—
—
—
—
0.028
0.038
30
2500
1300
300
25
160
350
240
–1.1
100
Max
—
—
–10
±10
–2.0
0.037
0.055
—
—
—
—
—
—
—
—
—
—
Ratings
–60
±20
–45
–180
–45
–45
173
60
150
–55 to +150
Unit
V
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
A
A
Test Conditions
I
I
V
V
I
I
I
I
V
V
f = 1MHz
V
R
I
I
diF/ dt =50A/µs
D
G
D
D
D
D
F
F
DS
GS
DS
GS
GS
L
= –45A, V
= –45A, V
= –10mA, V
= ±100 A, V
= –1mA, V
= –25A, V
= –25A, V
= –25A, V
= 1.2
= –60 V, V
= ±16V, V
= –10V
= 0
= –10V, I
Unit
V
V
A
A
A
A
mJ
W
°C
°C
GS
GS
GS
GS
DS
DS
D
DS
GS
= 0
= 0
GS
= –10V
= –4V
= –10V
= –25A
DS
= –10V
= 0
= 0
= 0
= 0
Note4
Note4
Note4