si5419du Vishay, si5419du Datasheet

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si5419du

Manufacturer Part Number
si5419du
Description
P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
si5419du-T1-GE3
Quantity:
2 684
Company:
Part Number:
si5419du-T1-GE3
Quantity:
70 000
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 90 °C/W.
Document Number: 69001
S-82656-Rev. A, 03-Nov-08
Ordering Information: Si5419DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
DS
- 30
(V)
PowerPAK ChipFET Single
0.033 at V
0.020 at V
8
http://www.vishay.com/ppg?73257
R
7
D
DS(on)
6
GS
D
GS
J
(Ω)
= - 4.5 V
= - 10 V
D
5
= 150 °C)
Bottom View
D
b, f
S
D
1
P-Channel 30-V (D-S) MOSFET
D
2
S
3
G
I
- 12
- 12
D
4
(A)
Steady State
a
a
d, e
T
T
T
T
T
T
T
T
T
T
t ≤ 5 s
). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
C
C
C
C
C
A
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
15.5 nC
g
(Typ.)
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
I
P
, T
I
DM
I
DS
GS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free
• TrenchFET
• New Thermally Enhanced PowerPAK
• Load Switch
ChipFET
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm profile
Marking Code
BF
Typical
XXX
Part #
Code
34
®
3
Package
®
Power MOSFET
Lot Traceability
and Date Code
- 55 to 150
- 9.9
- 7.9
- 2.6
3.1
Limit
- 12
- 12
- 12
± 20
2
- 30
- 40
260
31
20
b, c
b, c
b, c
b, c
b, c
a
a
a
Maximum
40
4
Vishay Siliconix
G
®
Si5419DU
P-Channel MOSFET
www.vishay.com
D
°C/W
S
Unit
Unit
°C
W
V
A
1

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si5419du Summary of contents

Page 1

... Bottom View Ordering Information: Si5419DU-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si5419DU Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 69001 S-82656-Rev. A, 03-Nov- 2.0 2.5 3 Si5419DU Vishay Siliconix ° 125 ° Gate-to-Source Voltage (V) GS Transfer Characteristics 2100 1800 C iss ...

Page 4

... Si5419DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.2 2 250 µA D 1.8 1.6 1.4 1 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 75 100 125 150 100 Limited ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69001 S-82656-Rev. A, 03-Nov-08 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si5419DU Vishay Siliconix ...

Page 6

... Si5419DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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