si5440dc Vishay, si5440dc Datasheet

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si5440dc

Manufacturer Part Number
si5440dc
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number:
si5440dc-T1-GE3
Manufacturer:
VISHAY
Quantity:
52 588
Document Number: 69056
S-83037-Rev. A, 22-Dec-08
Notes:
a. Package limited, T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 95 °C/W.
e. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Ordering Information: Si5440DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Foot (Drain)
Maximum Junction-to-Ambient
manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder
interconnection.
V
DS
30
(V)
D
1206-8 ChipFET
0.024 at V
0.019 at V
D
C
Bottom View
R
= 25 °C.
D
DS(on)
D
S
GS
D
GS
J
(Ω)
= 4.5 V
= 10 V
D
= 150 °C)
a, c, d
1
®
G
N-Channel 30-V (D-S) MOSFET
I
D
(A)
6
6
Steady State
a
e, f
T
T
T
T
T
T
T
T
T
T
t ≤ 5 s
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
g
9 nC
(Typ.)
New Product
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
I
P
, T
DM
I
I
DS
GS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• Load Switches
TrenchFET
- Notebook PC
Typical
40
15
®
Power MOSFET
G
N-Channel MOSFET
- 55 to 150
6
6
2.1
2.5
1.6
Limit
± 20
260
a, b, c
a, b, c
5.2
6.3
30
30
6
6
4
a
a
b, c
b, c
b, c
D
S
Maximum
50
20
Vishay Siliconix
Si5440DC
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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si5440dc Summary of contents

Page 1

... ChipFET Bottom View Ordering Information: Si5440DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si5440DC Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... 2.0 2.5 3.0 1500 1200 900 600 = 300 1.6 1.4 1 1.0 0.8 0 Si5440DC Vishay Siliconix ° ° 125 °C C 0.0 0.5 1.0 1.5 2.0 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) ...

Page 4

... Si5440DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.2 2 250 µA D 1.8 1.6 1.4 1.2 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.05 0.04 0. °C J 0.02 0.01 0 0.8 1.0 1 100 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69056 S-83037-Rev. A, 22-Dec-08 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si5440DC Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating www.vishay.com 150 5 ...

Page 6

... Si5440DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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