si3911dv Vishay, si3911dv Datasheet
si3911dv
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si3911dv Summary of contents
Page 1
... 25_C 70_C stg Symbol sec R thJA Steady State Steady State R thJF Si3911DV Vishay Siliconix P-Channel MOSFET 5 secs Steady State Unit –20 V "8 –1.8 –2.2 –1.8 –1.5 A "8 –1.05 –0.75 1.15 0.83 W ...
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... Si3911DV Vishay Siliconix _ Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time ...
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... J 0.1 0.00 0.3 0.6 0.9 V – Source-to-Drain Voltage (V) SD Document Number: 71380 S-20275—Rev. B, 18-Mar-02 New Product 4 1.2 1.5 Si3911DV Vishay Siliconix Capacitance 600 500 C iss 400 300 200 C oss C 100 rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...
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... Si3911DV Vishay Siliconix Threshold Voltage 0.4 0.3 0.2 = 250 0.1 0.0 –0.1 –0.2 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 – ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...