si3403dv Vishay, si3403dv Datasheet

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si3403dv

Manufacturer Part Number
si3403dv
Description
P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si3403dv-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si3403dv-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Package Limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 110 °C/W.
Document Number: 74404
S09-0766-Rev. B, 04-May-09
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
PRODUCT SUMMARY
V
DS
- 20
(V)
Ordering Information: Si3403DV-T1-E3 (Lead (Pb)-free)
0.105 at V
0.07 at V
3 mm
R
DS(on)
D
G
D
GS
GS
= - 4.5 V
J
(Ω)
= - 2.5 V
= 150 °C)
b, d
Si3403DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
Top View
1
2
3
TSOP-6
2. 8 5 mm
P-Channel 20-V (D-S) MOSFET
6
5
4
I
D
- 4.1
- 5
(A)
a
D
S
D
A
= 25 °C, unless otherwise noted
Q
4.5 nC
g
Steady State
(Typ.)
t ≤ 5 s
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Marking Code
AE
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• PWM Optimized, Low Q
• Compliant to RoHS Directive 2002/95/EC
• Load Switch for Portable Applications
• Small Portable DC-DC Applications
XXX
Part # Code
Definition
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
Lot Tracea b ility
and Date Code
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
stg
®
Power MOSFET
Typical
51
32
gd
- 55 to 150
/Q
G
- 3.1
1.25
Limit
1.6
- 4
gs
± 12
- 2.6
1.25
Maximum
- 20
- 20
- 5
2
3.2
2.1
- 4
5
P-Channel MOSFET
b,c
b,c
b,c
Ratio
a
62.5
b,c
b,c
Vishay Siliconix
39
S
D
Si3403DV
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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si3403dv Summary of contents

Page 1

... GS TSOP-6 Top View Ordering Information: Si3403DV-T1-E3 (Lead (Pb)-free) Si3403DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current ...

Page 2

... Si3403DV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Gate Charge Document Number: 74404 S09-0766-Rev. B, 04-May- thru Si3403DV Vishay Siliconix 2.0 1.6 1.2 0 125 °C C 0.4 25 ° °C 0.0 0.0 0.6 1.2 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 650 C 520 iss 390 260 C ...

Page 4

... Si3403DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.3 0.2 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.9 1.2 1 250 µ 100 125 150 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 1.5 1.2 0.9 0.6 0.3 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si3403DV Vishay Siliconix 125 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 150 ...

Page 6

... Si3403DV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.001 - Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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