si3430dv Vishay, si3430dv Datasheet - Page 3

• Manufacturer Part Number: si3430dv
• Description: N-channel 100-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 71235
S-31725—Rev. B, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.25
0.20
0.15
0.10
0.05
0.00
10
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 2.4 A
0.2
On-Resistance vs. Drain Current
= 50 V
1
V
SD
Q
2
g
T
- Source-to-Drain Voltage (V)
I
J
0.4
D
- Total Gate Charge (nC)
2
= 150_C
- Drain Current (A)
Gate Charge
V
GS
0.6
4
3
= 6.0 V
0.8
4
V
6
GS
T
J
= 10 V
1.0
= 25_C
5
1.2
8
6
500
400
300
200
100
0.4
0.3
0.2
0.1
0.0
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 2.4 A
10
= 10 V
C
2
rss
T
V
V
0
J
GS
DS
- Junction Temperature (_C)
20
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
4
Vishay Siliconix
C
50
30
C
oss
iss
I
6
D
75
= 2.4 A
40
Si3430DV
100
www.vishay.com
8
50
125
150
10
60
3