si3440dv Vishay, si3440dv Datasheet - Page 2

• Manufacturer Part Number: si3440dv
• Description: N-channel 150-v D-s Mosfet
• Manufacturer: Vishay

Notes
a.
b.
www.vishay.com
2
Si3440DV
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
b
0.0
Parameter
0.5
a
a
V
DS
1.0
a
Output Characteristics
− Drain-to-Source Voltage (V)
1.5
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
2.0
V
GS
= 10 thru 5 V
2.5
Symbol
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
3.0
3.5
4 V
3 V
New Product
4.0
V
V
I
DS
DS
D
^ 1 A, V
I
= 150 V, V
= 75 V, V
F
V
V
V
V
V
V
V
V
V
DS
= 1.7 A, di/dt = 100 A/ms
I
DS
DS
DS
Test Condition
GS
GS
DS
S
DD
DD
= 1.7 A, V
= 0 V, V
= V
= 150 V, V
w 5 V, V
= 10 V, I
= 6.0 V, I
= 15 V, I
= 75 V, R
= 75 V, R
GEN
f = 1 MHz
GS
GS
GS
, I
= 10 V, R
GS
= 10 V, I
D
= 0 V, T
D
GS
GS
D
D
L
L
= 250 mA
GS
= "20 V
= 1.5 A
= 1.4 A
= 1.5 A
= 75 W
= 75 W
= 10 V
= 0 V
= 0 V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
D
J
G
= 85_C
= 1.5 A
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
= 6 W
V
GS
Transfer Characteristics
− Gate-to-Source Voltage (V)
Min
2
4
4
T
C
25_C
= 125_C
0.310
0.330
Typ
4.1
0.8
5.4
1.1
1.9
10
20
15
40
S-32412—Rev. B, 24-Nov-03
9
8
Document Number: 72380
Max
"100
0.375
0.400
1.2
15
15
15
30
25
60
4
1
5
8
−55_C
Unit
nC
nA
mA
mA
ns
ns
ns
W
W
W
V
A
S
V