si3443dvpbf InterFET Corporation, si3443dvpbf Datasheet
si3443dvpbf
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si3443dvpbf Summary of contents
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... Power Dissipation D A Linear Derating Factor E Single Pulse Avalanche Energy„ Gate-to-Source Voltage Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient TJA www.irf.com Si3443DVPbF HEXFET Top View 60% DS(on) reduction DS(on) @ -4. -4. 150 ƒ ...
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... Si3443DVPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient 'V /'T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... TOP BOTTOM 10 1 ° 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 2 1.5 ° J 1.0 0.5 = -15V 0.0 3.0 3.5 -60 -40 -20 Fig 4. Normalized On-Resistance Si3443DVPbF VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V -1.50V -1.50V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS -5. -4. ...
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... Si3443DVPbF 1600 1MHz iss rss oss ds gd 1200 C iss 800 400 C oss C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 ° 150 C J ° 0.1 0.0 0.4 0.8 1.2 -V ,Source-to-Drain Voltage (V) SD Fig 7 ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 125 150 ° Starting T , Junction Temperature ( C) Fig 10. Maximum Avalanche Energy 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 Si3443DVPbF I D TOP -1.3A -2.4A BOTTOM -3. 100 125 ° J Vs. Drain Current ...
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... Si3443DVPbF TSOP-6 Package Outline TSOP-6 Part Marking Information PART NUMBER TO P PART NUMBER C ODE REFEREN CE SI3443DV B = IRF5800 C = IRF5850 D = IRF5851 E = IRF5852 F = IRF5801 I = IRF5805 J = IRF5806 K = IRF5810 L = IRF5804 M = IRF5803 N = IRF5802 Note: A line above the work week (as shown here) indicates Lead-Free (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR ...
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... This product has been designed and qualified for the Consumer market. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com Si3443DVPbF Data and specifications subject to change without notice. Qualifications Standards can be found on IR’s Web site. TAC Fax: (310) 252-7903 Visit us at www ...