sum110n08-10 Vishay, sum110n08-10 Datasheet
sum110n08-10
Available stocks
Related parts for sum110n08-10
sum110n08-10 Summary of contents
Page 1
... N-Channel 75-V (D-S) MOSFET PRODUCT SUMMARY V (V) r (BR)DSS DS(on) 75 0.010 @ V GS TO-263 Top View Ordering Information: SUM110N08-10 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current Avalanche Current a Repetitive Avalanche Energy a a Maximum Power Dissipation ...
Page 2
... SUM110N08-10 Vishay Siliconix SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
Page 3
... Drain-to-Source Voltage (V) DS Document Number: 71838 S-32413—Rev. C, 24-Nov- 0.010 0.008 25_C 0.006 125_C 0.004 0.002 0.000 SUM110N08-10 Vishay Siliconix Transfer Characteristics 200 160 120 125_C C 40 25_C − Gate-to-Source Voltage (V) GS On-Resistance vs ...
Page 4
... SUM110N08-10 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 2.0 1.5 1.0 0.5 0.0 −50 − − Junction Temperature (_C) J Avalanche Current vs. Time 1000 100 150_C AV A 0.1 0.00001 0.0001 0.001 0.01 t (Sec) in www.vishay.com 4 100 10 1 100 ...
Page 5
... S-32413—Rev. C, 24-Nov-03 1000 100 10 1 0.1 125 150 175 0.1 Normalized Thermal Transient Impedance, Junction-to-Case −2 − Square Wave Pulse Duration (sec) SUM110N08-10 Vishay Siliconix Safe Operating Area Limited by r DS(on 25_C C Single Pulse 1 10 100 V − Drain-to-Source Voltage (V) DS ...