sum110n04-03l Vishay, sum110n04-03l Datasheet
sum110n04-03l
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sum110n04-03l Summary of contents
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... 0 25_C 25_C Symbol d PCB Mount R thJA R thJC SUM110N04-03L Vishay Siliconix FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D Automotive Applications Such As: - ABS - 12-V EPS - Motor Drives D Industrial Limit 40 "20 a 110 a 102 300 55 151 c 230 3.75 -55 to 175 ...
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... SUM110N04-03L Vishay Siliconix SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... S-22247—Rev. A, 25-Nov-02 New Product 0.008 T = -55_C C 0.006 25_C 125_C 0.004 0.002 0.000 SUM110N04-03L Vishay Siliconix Transfer Characteristics 250 200 150 100 T = 125_C C 50 25_C - Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current ...
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... SUM110N04-03L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 1.6 1.2 0.8 0.4 0.0 -50 - Junction Temperature (_C) J Avalanche Current vs. Time 1000 100 150_C AV A 0.1 0.00001 0.0001 0.001 0.01 t (Sec) in www.vishay.com 4 New Product 100 10 1 100 ...
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... S-22247—Rev. A, 25-Nov-02 New Product 1000 100 10 1 0.1 125 150 175 0.1 Normalized Thermal Transient Impedance, Junction-to-Case - Square Wave Pulse Duration (sec) SUM110N04-03L Vishay Siliconix Safe Operating Area, Junction-to-Case Limited by r DS(on 25_C C Single Pulse Drain-to-Source Voltage ( www ...
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... This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. ...