si1905bdh Vishay, si1905bdh Datasheet - Page 3

• Manufacturer Part Number: si1905bdh
• Description: Dual P-channel 1.8-v G-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74638
S-72340-Rev. B, 05-Nov-07
2.0
1.6
1.2
0.8
0.4
1.8
1.5
1.2
0.9
0.6
0.3
On-Resistance vs. Drain Current and Gate Voltage
0
5
4
3
2
1
0
0
0
0
0
I
D
V
= 0.57 A
GS
0.3
= 1.8 V
0.6
V
0.3
DS
Output Characteristics
Q
V
- Drain-to-Source Voltage (V)
g
0.6
DS
I
- Total Gate Charge (nC)
D
= 4 V
Gate Charge
- Drain Current (A)
1.2
V
GS
0.9
0.6
= 2.5 V
V
GS
1.8
= 5 V thru 2.5 V
1.2
V
V
DS
V
V
GS
0.9
GS
GS
= 6.4 V
2.4
= 4.5 V
= 2 V
= 1.5 V
1.5
New Product
1.8
1.2
3.0
100
0.5
0.4
0.3
0.2
0.1
1.8
1.5
1.2
0.9
0.6
0.3
80
60
40
20
0
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
- 25
V
V
T
T
V
V
GS
GS
J
J
0.6
Transfer Characteristics
GS
DS
T
2
0
= 25 °C
= 125 °C
J
= 4.5 V, I
= 2.5 V, I
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
C
Capacitance
25
rss
D
D
= 0.57 A
= 0.47 A
1.2
50
Vishay Siliconix
4
Si1905BDH
V
C
T
GS
J
iss
C
75
= - 55 °C
oss
= 1.8 V, I
www.vishay.com
100
1.8
6
D
= 0.06 A
125
150
2.4
8
3