si1431dh Vishay, si1431dh Datasheet
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si1431dh
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si1431dh Summary of contents
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... DS DS(on) 0.200 0.355 4 Ordering Information: Si1431DH-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Diode Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si1431DH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...
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... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72694 S10-0646-Rev. B, 22-Mar- °C J 0.9 1.2 1.5 Si1431DH Vishay Siliconix 300 250 C iss 200 150 100 C oss 50 C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...
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... Si1431DH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.9 0 250 µA D 0.3 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 10 Limited (DS) °C A Single Pulse 0.01 0 Drain-to-Source Voltage ( > ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72694. Document Number: 72694 S10-0646-Rev. B, 22-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si1431DH Vishay Siliconix - www.vishay.com 10 5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...