sud50np04-62 Vishay, sud50np04-62 Datasheet
sud50np04-62
Related parts for sud50np04-62
sud50np04-62 Summary of contents
Page 1
... 4 TO-252-4L D-PAK D Top View Drain Connected to Tab Ordering Information: SUD50NP04-62-T4-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current ...
Page 2
... SUD50NP04-62 Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...
Page 3
... ° 1 1 N-Channel di/dt = 100 A/µ P-Channel di/ 100 A/µ SUD50NP04-62 Vishay Siliconix a Min Typ Max Ω P-Ch ...
Page 4
... SUD50NP04-62 Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted thru 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.030 0.028 0.026 0.024 0.022 V GS 0.020 0.018 Drain Current (A) D On-Resistance vs. Drain Current ...
Page 5
... Single Pulse Power, Junction-to-Case Document Number: 74401 S-62031-Rev. A, 16-Oct-06 0.15 0.12 0.09 25 °C 0.06 0.03 0.00 0.8 1.0 1 100 125 150 100 0.1 0. SUD50NP04-62 Vishay Siliconix 125 °C 25 ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0 0.001 0.01 0 Time (sec) ...
Page 6
... SUD50NP04-62 Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 100 *Limited by r DS(on 0 °C C Single Pulse 0.01 0.01 0 Drain-to-Source Voltage ( minimum V at which Safe Operating Area, Junction-to-Case Limited by Package Case Temperature (°C) ...
Page 7
... Document Number: 74401 S-62031-Rev. A, 16-Oct- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case SUD50NP04-62 Vishay Siliconix Notes Duty Cycle ...
Page 8
... SUD50NP04-62 Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted thru 0.0 0.5 1.0 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.040 0.035 0.030 0.025 V 0.020 0.015 Drain Current (A) D On-Resistance vs. Drain Current ...
Page 9
... Time (sec) Single Pulse Power, Junction-to-Case Document Number: 74401 S-62031-Rev. A, 16-Oct- °C J 0.9 1.2 1 250 µ 100 125 150 1 10 SUD50NP04-62 Vishay Siliconix 0. 0.12 0.09 0.06 125 °C 0.03 25 °C 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...
Page 10
... SUD50NP04-62 Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 100 *Limited by r DS(on 0 °C C Single Pulse 0.01 0.01 0 Drain-to-Source Voltage ( minimum V at which Safe Operating Area, Junction-to-Case Limited by Package Case Temperature (°C) ...
Page 11
... Document Number: 74401 S-62031-Rev. A, 16-Oct- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case SUD50NP04-62 Vishay Siliconix Notes Duty Cycle ...
Page 12
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...