sud50n02-12p Vishay, sud50n02-12p Datasheet

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sud50n02-12p

Manufacturer Part Number
sud50n02-12p
Description
N-channel 20-v D-s 175c Mosfet
Manufacturer
Vishay
Datasheet
Notes
a.
b.
c.
Document Number: 72095
S-41168—Rev. C, 14-Jun-04
Ordering Information: SUD50N02-12P
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
Surface Mounted on FR4 Board, t v 10 sec.
Limited by package
Based on maximum allowable Junction Temperature. Package limitation current is 30 A.
DS
20
20
(V)
G
Top View
TO-252
D
S
SUD50N02-12P—E3 (Lead Free)
a
a
0.026 @ V
0.012 @ V
a
a
Drain Connected to Tab
r
DS(on)
N-Channel 20-V (D-S) 175_C MOSFET
Parameter
Parameter
GS
GS
(W)
= 4.5 V
= 10 V
a
A
= 25_C UNLESS OTHERWISE NOTED)
I
D
40
27
(A)
Steady State
T
c
c
T
T
t v 10 sec
T
C
C
C
A
a
= 100_C
= 25_C
= 25_C
= 25_C
G
N-Channel MOSFET
D
S
Symbol
Symbol
T
R
R
R
V
V
J
I
P
P
, T
DM
thJC
I
I
I
thJA
DS
GS
D
D
S
D
D
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D PWM Optimized for High Efficiency
D 100% R
APPLICATIONS
D High-Side Synchronous Buck DC/DC
stg
Conversion
− Desktop
− Server
g
Typical
Tested
3.7
20
40
−55 to 175
Limit
SUD50N02-12P
"20
33.3
40
28
20
90
6
Vishay Siliconix
4
a
c
c
Maximum
4.5
25
50
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1

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sud50n02-12p Summary of contents

Page 1

... 0.026 @ TO-252 Drain Connected to Tab Top View Ordering Information: SUD50N02-12P SUD50N02-12P—E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation ...

Page 2

... SUD50N02-12P Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance Drain Source On State Resistance b Forward Transconductance a Dynamic ...

Page 3

... S-41168—Rev. C, 14-Jun-04 0.040 0.035 T = −55_C C 0.030 0.025 25_C 125_C 0.020 0.015 0.010 0.005 0.000 100 100 125 150 175 SUD50N02-12P Vishay Siliconix On-Resistance vs. Drain Current − Drain Current (A) D Gate Charge ...

Page 4

... SUD50N02-12P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 100 T − Ambient Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 −4 − www.vishay.com 4 1000 100 10 1 0.1 0.01 125 150 175 Normalized Thermal Transient Impedance, Junction-to-Ambient − ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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