irlr9343 International Rectifier Corp., irlr9343 Datasheet - Page 2

• Manufacturer Part Number: irlr9343
• Description: -55v Single P-channel Hexfet Power Mosfet In A I-pak Package
• Manufacturer: International Rectifier Corp.

Electrical Characteristics @ T
BV
∆ΒV
R
V
∆V
I
I
g
Q
Q
Q
Q
t
t
t
t
C
C
C
C
L
L
Avalanche Characteristics
E
I
E
Diode Characteristics
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
fs
D
S
GS(th)
AS
AR
SD
DS(on)
g
gs
gd
godr
iss
oss
rss
oss
rr
2
@ T
GS(th)
DSS
DSS
C
/∆T
/∆T
= 25°C Continuous Source Current
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
Internal Source Inductance
Single Pulse Avalanche Energyd
Avalanche Current i
Repetitive Avalanche Energy i
(Body Diode)
Pulsed Source Current
(Body Diode) c
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-55
5.3
-3.7
–––
150
–––
–––
–––
–––
–––
–––
660
160
280
–––
–––
–––
120
-52
7.1
8.5
9.5
9.5
4.5
7.5
93
31
15
24
21
72
57
-100
-2.0
Typ.
See Fig. 14, 15, 17a, 17b
-1.2
–––
–––
105
170
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
180
-25
-20
-60
47
86
mV/°C
mV/°C
mΩ
µA
nA
nH
nC
pF
ns
ns
S
V
V
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
See Fig. 6 and 19
V
I
R
V
V
ƒ = 1.0MHz,
V
Between lead,
6mm (0.25in.)
from package
and center of die contact f
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs e
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
DS
GS
G
= -14A
= -14A
= 25°C, I
= 25°C, I
= 2.5Ω
= 0V, I
= -10V, I
= -4.5V, I
= V
= -55V, V
= -55V, V
= -20V
= 20V
= -25V, I
= -44V
= -10V
= -28V, V
= 0V
= -50V
= 0V, V
GS
Max.
120
, I
D
Conditions
D
DS
Conditions
S
F
= -250µA
D
D
= -14A, V
= -14A
= -250µA
D
GS
GS
GS
= 0V to -44V
= -3.4A e
= -14A
= -2.7A e
= 0V
= 0V, T
= -10V e
See Fig.5
D
www.irf.com
= -1mA
GS
J
G
= 125°C
= 0V e
Units
mJ
mJ
A
D
S