irlr2908 International Rectifier Corp., irlr2908 Datasheet - Page 2

• Manufacturer Part Number: irlr2908
• Description: Hexfet Power Mosfet Automotive Mosfet
• Manufacturer: International Rectifier Corp.

Notes
IRLR2908/IRLU2908
HEXFET
V
'%V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
C
C
C
I
I
V
t
Q
t
Static @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
2
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
DSS
eff.

/'T
through
®
J
is a registered trademark of International Rectifier.
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C (unless otherwise specified)
ˆ
Parameter
are on page 11
Ù
Parameter
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
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–––
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–––
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–––
–––
–––
–––
1.0
80
35
0.085
1890
1920
22.5
–––
–––
–––
–––
–––
–––
–––
260
170
310
–––
–––
–––
210
6.0
4.5
7.5
25
22
11
12
95
36
55
35
75
-200
–––
–––
–––
250
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
150
110
310
2.5
9.1
1.3
28
30
20
33
17
39
V/°C
m:
µA
nA
nC
nH
nC
ns
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 23A
= 23A
= 25°C, I
= 25°C, I
= 8.3:
= V
= 25V, I
= 80V, V
= 80V, V
= 64V
= 25V
= 0V, I
= 10V, I
= 4.5V, I
= 16V
= -16V
= 4.5V
= 40V
= 4.5V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
Conditions
D
Conditions
f
D
DS
S
F
D
D
DS
DS
= 250µA
D
GS
GS
= 250µA
= 23A, V
= 23A, V
= 23A
= 23A
= 20A
= 0V to 64V
= 1.0V, ƒ = 1.0MHz
= 64V, ƒ = 1.0MHz
f
= 0V
= 0V, T
www.irf.com
D
f
f
= 1mA
GS
DD
G
J
= 125° C
G
= 25V
= 0V
f
S
D
S
D