si4276dy Vishay, si4276dy Datasheet - Page 9

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si4276dy

Manufacturer Part Number
si4276dy
Description
Dual N-channel 30 V D-s Mosfet
Manufacturer
Vishay
Datasheet

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CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 66599
S10-1289-Rev. A, 31-May-10
100
2.1
1.9
1.7
1.5
1.3
1.1
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
V
0.3
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
25
- Temperature (°C)
T
I
J
D
0.6
= 150 °C
50
= 250 μA
75
0.01
100
0.1
10
1
0.1
100
0.9
T
* V
Safe Operating Area, Junction-to-Ambient
J
= 25 °C
GS
Single Pulse
125
T
Limited by R
A
> minimum V
= 25 °C
V
DS
150
1.2
- Drain-to-Source Voltage (V)
1
DS(on)
GS
at which R
*
BVDSS Limited
DS(on)
0.060
0.045
0.030
0.015
10
50
40
30
20
10
0
0
0.001
is specified
0
On-Resistance vs. Gate-to-Source Voltage
I
Single Pulse Power, Junction-to-Ambient
D
100 μs
1 ms
10 ms
100 ms
1 s
10 s
DC
= 6.8 A
0.01
2
V
100
GS
T
- Gate-to-Source Voltage (V)
J
0.1
= 25 °C
4
Time (s)
1
Vishay Siliconix
6
10
Si4276DY
T
www.vishay.com
J
= 125 °C
8
100
1000
10
9

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