si4511dy Vishay, si4511dy Datasheet
si4511dy
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si4511dy Summary of contents
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... SO Top View Ordering Information: Si4511DY-T1 Si4511DY-T1-E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a, b Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si4511DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static V Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b r Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltag a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...
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... Q − Total Gate Charge (nC) g Gate Charge Document Number: 72223 S-61005-Rev. D, 12-Jun- 1.00 1.25 1.50 1. Si4511DY Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 V − Gate-to-Source Voltage (V) GS Transfer Characteristics 2000 1600 ...
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... Si4511DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 150 ° 0.00 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µA D 0.2 - 0.0 - 0.2 - 0.4 - 0 − Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 75 100 125 150 100 r Limited ...
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... Document Number: 72223 S-61005-Rev. D, 12-Jun- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Si4511DY Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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... Si4511DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted thru 3 0.0 0.4 0.8 V − Drain-to-Source Voltage (V) DS Output Characteristics 0.10 0. 0.04 0.02 0. − Drain Current (A) D On-Resistance vs. Drain Current 6 − Total Gate Charge (nC) ...
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... I r Limited DS(on D(on) Limited °C C 0.1 Single Pulse BV Limited DSS 0.01 0 − Drain-to-Source Voltage (V) DS Safe Operating Area Si4511DY Vishay Siliconix 0.10 0. 0.04 0.02 0. − Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...
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... Si4511DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...