si4561dy Vishay, si4561dy Datasheet
si4561dy
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si4561dy Summary of contents
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... Top View Ordering Information: Si4561DY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...
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... Si4561DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...
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... 1 1 N-Channel di/dt = 100 A/µ ° P-Channel di/ 100 A/µ ° Si4561DY Vishay Siliconix a Min. Max. Unit Typ N-Ch ...
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... Si4561DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.060 0.052 0.044 0.036 0.028 0.020 Drain Current (A) D On-Resistance vs. Drain Current ...
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... °C A Single Pulse 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si4561DY Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...
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... Si4561DY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.2 2.4 1.6 0 Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based J(max) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Document Number: 69730 S-80109-Rev. B, 21-Jan-08 New Product - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -2 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4561DY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 120 ° ...
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... Si4561DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.050 0.044 0.038 0.032 0.026 0.020 Drain Current (A) D On-Resistance vs. Drain Current ...
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... °C A Single Pulse 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si4561DY Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...
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... Si4561DY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.2 2.4 1.6 0.8 0 Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based J(max) dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Document Number: 69730 S-80109-Rev. B, 21-Jan-08 New Product - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -2 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4561DY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 120 ° ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...