si4563dy Vishay, si4563dy Datasheet - Page 9

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si4563dy

Manufacturer Part Number
si4563dy
Description
N- And P-channel 40-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73513
S-71950-Rev. B, 10-Sep-07
- 0.1
- 0.2
- 0.3
0.0
0.5
0.4
0.3
0.2
0.1
100
0.1
10
1
0.0
- 50
- 25
Source-Drain Diode Forward Voltage
T
0.3
V
J
SD
= 150 °C
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
- Temperature (°C)
25
0.6
50
I
D
= 250 µA
0.9
75
T
J
0.01
100
= 25 °C
0.1
100
10
1
0.1
1.2
I
D
Safe Operating Area, Junction-to-Ambient
* V
= 5 mA
125
Limited by r
GS
New Product
> minimum V
V
1.5
150
DS
DS(on)
- Drain-to-Source Voltage (V)
Single Pulse
1
T
A
*
= 25 °C
GS
at which r
DS(on)
10
0.20
0.16
0.12
0.08
0.04
0.00
50
40
30
20
10
0
0.001
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
10 ms
1 ms
100 ms
1 s
10 s
DC
T
2
A
0.01
100
V
= 25 °C
GS
3
- Gate-to-Source Voltage (V)
T
A
4
= 125 °C
Time (s)
0.1
5
Vishay Siliconix
6
Si4563DY
I
7
D
www.vishay.com
= 5 A
1
8
9
10
10
9

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