si4565ady Vishay, si4565ady Datasheet
si4565ady
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... Top View Ordering Information: Si4565ADY-T1-E3 (Lead (Pb)-free) Si4565ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current ...
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... Si4565ADY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Drain-Source Breakdown Voltage ΔV V Temperature Coefficient DS ΔV V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance ...
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... GEN ° 1 1 N-Channel 1.7 A, dI/dt = 100 A/µ ° P-Channel 1.7 A, dI/ 100 A/µ Si4565ADY Vishay Siliconix a Min. Typ. N-Ch 9 P-Ch 7 N-Ch 51 P-Ch 42 N-Ch 21 P-Ch 33 N-Ch 6 P-Ch 56 N-Ch 13 P-Ch 21 N-Ch 85 P-Ch 90 N-Ch 17 P-Ch 44 N-Ch 7 P-Ch 56 N-Ch P-Ch N-Ch ...
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... Si4565ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.5 1.0 V – Drain-to-Source Voltage (V) DS Output Characteristics 0.052 0.047 0.042 0.038 V GS 0.033 0.028 – Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage ...
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... Limited DS(on 0 °C A Single Pulse 0.01 0 – Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si4565ADY Vishay Siliconix 0.30 0.24 0.18 0. 125 ° ° – Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 60 48 ...
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... Si4565ADY Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.2 2.4 1.6 0.8 0 – Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Document Number: 73880 S09-0393-Rev. B, 09-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si4565ADY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 110 ° ...
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... Si4565ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru – Drain-to-Source Voltage (V) DS Output Characteristics 0. 0.06 0.05 0.04 0. – Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage 4 ...
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... Limited DS(on 0 °C A Single Pulse 0.01 0 – Drain-to-Source Voltage ( minimum V at which Safe Operating Area, Junction-to-Ambient Si4565ADY Vishay Siliconix 0. 0.24 0.18 0. 125 ° ° – Gate-to-Source Voltage (V) GS On-Resistance vs ...
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... Si4565ADY Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.2 2.4 1.6 0.8 0 – Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Document Number: 73880 S09-0393-Rev. B, 09-Mar-09 Single Pulse - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4565ADY Vishay Siliconix Notes: Notes ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...