si4682dy Vishay, si4682dy Datasheet
si4682dy
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si4682dy Summary of contents
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... Top View Ordering Information: Si4682DY-T1-E3 (Lead (Pb)-free) Si4682DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current ...
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... Si4682DY Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance ...
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... Q – Total Gate Charge (nC) g Gate Charge Document Number: 73317 S09-0767-Rev. C, 04-May- 0.9 1.2 1 Si4682DY Vishay Siliconix 1.2 1.0 0.8 0 125 °C C 0.4 0.2 25 °C 0.0 1.0 1.4 1.8 2.2 V – Gate-to-Source Voltage (V) GS Transfer Characteristics 2000 C 1600 1200 800 C oss ...
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... Si4682DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.01 0.001 0.00 0.2 0.4 0.6 V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 0.0 - 0.2 - 0.4 - 0 – Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1 250 µ 100 125 150 ...
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... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73317 S09-0767-Rev. C, 04-May-09 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4682DY Vishay Siliconix 100 · ...
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... Si4682DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...
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... MILLIMETERS Min Max 1.35 1.75 0.10 0.20 0.35 0.51 0.19 0.25 0.0075 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.50 0.93 0° 8° 0.44 0.64 Package Information Vishay Siliconix H C All Leads 0.101 mm q 0.004" INCHES Min Max 0.053 0.069 0.004 0.008 0.014 0.020 0.010 0.189 0.196 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.020 0.020 0.037 0° 8° ...
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... See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/ppg?72286), for the basis of the pad design for a LITTLE FOOT SO-8 power MOSFET. In converting this recommended minimum pad ...
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... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.022 (0.559) Return to Index Return to Index www.vishay.com 22 0.172 (4.369) 0.028 (0.711) 0.050 (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72606 Revision: 21-Jan-08 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...