si4154dy Vishay, si4154dy Datasheet

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si4154dy

Manufacturer Part Number
si4154dy
Description
N-channel 40-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Quantity
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Part Number:
si4154dy-T1-GE3
Manufacturer:
VISHAY
Quantity:
30 000
Part Number:
si4154dy-T1-GE3
Manufacturer:
VISHAY
Quantity:
10 000
Company:
Part Number:
si4154dy-T1-GE3
Quantity:
5 000
Document Number: 65000
S09-0998-Rev. A, 01-Jun-09
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 80 °C/W.
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Ordering Information: SI4154DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
V
DS
40
(V)
G
S
S
S
C
= 25 °C.
1
2
3
4
0.0039 at V
0.0033 at V
R
Top View
DS(on)
SO-8
GS
GS
J
(Ω)
= 150 °C)
= 4.5 V
= 10 V
b, d
8
7
6
5
N-Channel 40-V (D-S) MOSFET
D
D
D
D
I
D
36
33
(A)
Steady State
a
t ≤ 10 s
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
Q
= 25 °C, unless otherwise noted
32.5 nC
g
(Typ.)
New Product
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
S
AS
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• POL
• Synchronous Rectification
Definition
Typical
29
13
g
and UIS Tested
®
Power MOSFET
G
- 55 to 150
N-Channel MOSFET
3.1
3.5
2.2
Limit
24
19
± 20
7.0
7.8
5.0
40
36
26
70
40
80
b, c
b, c
b, c
b, c
b, c
D
S
Maximum
35
16
Vishay Siliconix
Si4154DY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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si4154dy Summary of contents

Page 1

... Top View Ordering Information: SI4154DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy ...

Page 2

... Si4154DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Document Number: 65000 S09-0998-Rev. A, 01-Jun-09 New Product 1.5 2.0 2.5 5500 4400 3300 2200 1100 2 1.7 1 1.1 0.8 0.5 43.2 57.6 72.0 Si4154DY Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...

Page 4

... Si4154DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.5 0.2 - 0 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.030 0.024 °C J 0.018 0.012 0.006 0.000 ...

Page 5

... T - Ambient Temperature (°C) A Power, Junction-to-Ambient = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4154DY Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating, Junction-to-Foot 125 150 www.vishay.com 150 5 ...

Page 6

... Si4154DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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