si4178dy Vishay, si4178dy Datasheet - Page 3

no-image

si4178dy

Manufacturer Part Number
si4178dy
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si4178dy-T1-E3
Manufacturer:
VISHAY/PBF
Quantity:
406 720
Part Number:
si4178dy-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si4178dy-T1-GE3
Manufacturer:
AD
Quantity:
9 250
Part Number:
si4178dy-T1-GE3
Manufacturer:
VISHAY
Quantity:
30 000
Part Number:
si4178dy-T1-GE3
Manufacturer:
VISHAY
Quantity:
220
Part Number:
si4178dy-T1-GE3
Manufacturer:
INTERSIL
Quantity:
20 000
Company:
Part Number:
si4178dy-T1-GE3
Quantity:
400
Company:
Part Number:
si4178dy-T1-GE3
Quantity:
70 000
Part Number:
si4178dy-TI-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si4178dy0T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 65718
S10-0212-Rev. A, 25-Jan-10
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
40
30
20
10
10
0
8
6
4
2
0
0.0
0
0
I
D
V
= 8.4 A
GS
5
0.5
On-Resistance vs. Drain Current
= 4.5 V
V
DS
Output Characteristics
10
2
Q
- Drain-to-Source Voltage (V)
g
1.0
V
- Total Gate Charge (nC)
I
GS
V
D
15
Gate Charge
DS
- Drain Current (A)
= 10 V thru 6 V
= 7.5 V
V
1.5
20
DS
4
= 15 V
25
2.0
V
V
GS
DS
V
30
6
V
= 3 V
GS
= 24 V
V
GS
GS
2.5
= 5 V
= 10 V
= 4 V
35
3.0
40
8
600
500
400
300
200
100
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
- 25
5
1
V
V
DS
GS
Transfer Characteristics
C
C
T
0
J
iss
rss
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
10
T
Capacitance
C
25
V
= 125 °C
2
C
GS
oss
= 10 V; I
T
15
50
C
Vishay Siliconix
= 25 °C
V
GS
3
D
75
= 4.5 V; I
Si4178DY
= 8.4 A
20
www.vishay.com
100
T
C
4
D
= - 55 °C
25
= 8.4 A
125
150
30
5
3

Related parts for si4178dy