si4378dy Vishay, si4378dy Datasheet

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si4378dy

Manufacturer Part Number
si4378dy
Description
N-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number:
si4378dy-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
25 044
Part Number:
si4378dy-T1-E3
Manufacturer:
VISHAY
Quantity:
7 856
Part Number:
si4378dy-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
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Part Number:
si4378dy-T1-E3
Quantity:
70 000
Part Number:
si4378dy-T1-GE3
Manufacturer:
TI
Quantity:
867
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 72918
S-70316-Rev. B, 12-Feb-07
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Avalanche Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
20
Ordering Information: Si4378DY-T1-E3 (Lead (Pb)-free)
(V)
G
S
S
S
1
2
3
4
0.0027 at V
0.0042 at V
Top View
SO-8
r
DS(on)
J
a
= 150 °C)
a
GS
GS
(Ω)
= 4.5 V
= 2.5 V
8
7
6
5
N-Channel 20-V (D-S) MOSFET
a
D
D
D
D
a
A
I
New Product
D
= 25 °C, unless otherwise noted
25
22
(A)
Steady State
Steady State
L = 0.1 mH
T
T
T
T
t ≤ 10 sec
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Ultra Low On-Resistance Using High
• Q
• 100 % R
• Synchronous Rectification
• Point-Of-Load
G
Symbol
Symbol
T
Density TrenchFET
Technology
R
R
J
V
V
I
I
P
, T
DM
thJA
thJF
N-Channel MOSFET
I
I
AS
g
GS
DS
D
S
D
Optimized
stg
g
D
S
Tested
Typical
10 sec
2.9
3.5
2.2
29
67
13
25
20
®
- 55 to 150
Gen II Power MOSFET
± 12
20
70
40
Steady State
Maximum
1.3
1.6
35
80
16
Vishay Siliconix
19
13
1
Si4378DY
www.vishay.com
°C/W
Unit
Unit
RoHS
COMPLIANT
°C
W
V
A
1

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si4378dy Summary of contents

Page 1

... Top View Ordering Information: Si4378DY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) Avalanche Current a Maximum Power Dissipation ...

Page 2

... Si4378DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72918 S-70316-Rev. B, 12-Feb- 2 °C J 0.8 1.0 1.2 Si4378DY Vishay Siliconix 10000 C iss 8000 6000 4000 C rss C 2000 oss Drain-to-Source Voltage (V) DS Capacitance 1 4 ...

Page 4

... Si4378DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA D 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. www.vishay.com 4 75 100 125 150 100 Limited by r DS(on 0 °C C Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72918. Document Number: 72918 S-70316-Rev. B, 12-Feb- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Si4378DY Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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