si4310bdy Vishay, si4310bdy Datasheet - Page 4

• Manufacturer Part Number: si4310bdy
• Description: Dual N-channel 30-v D-s Mosfet With Schottky Diode
• Manufacturer: Vishay

Si4310BDY
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.0
−0.2
−0.4
−0.6
−0.8
0.4
0.2
30
10
10
1
8
6
4
2
0
−50
0.0
0
V
I
D
−25
DS
Source-Drain Diode Forward Voltage
= 10 A
0.2
= 15 V
5
V
SD
0
Q
g
− Source-to-Drain Voltage (V)
T
Threshold Voltage
0.4
− Total Gate Charge (nC)
J
T
− Temperature (_C)
25
J
Gate Charge
10
= 150_C
I
0.6
D
50
= 250 mA
15
75
0.8
100
T
J
20
= 25_C
1.0
125
150
1.2
25
New Product
0.05
0.04
0.03
0.02
0.01
0.00
200
160
120
1.6
1.4
1.2
1.0
0.8
0.6
80
40
0
−50
0.001
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
−25
GS
= 10 A
= 10 V
2
0.01
T
V
0
J
GS
Single Pulse Power
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
25
Time (sec)
4
I
D
0.1
50
= 10 A
S-41530—Rev. A, 16-Aug-04
6
Document Number: 73064
75
CHANNEL-1
1
100
8
125
150
10
10