si4972dy Vishay, si4972dy Datasheet
si4972dy
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si4972dy Summary of contents
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... Top View Ordering Information: Si4972DY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current ...
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... Si4972DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...
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... 1 1 Channel di/dt = 100 A/µ Channel di/dt = 100 A/µ Si4972DY Vishay Siliconix a Min Max Typ Ω Ω ...
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... Si4972DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.5 1.0 V – Drain-to-Source Voltage (V) DS Output Characteristics (Ch 1) 0.020 0.018 0.016 0.014 0.012 0.010 – Drain Current (A) – Drain Current ( On-Resistance vs. Drain Current and Gate Voltage (Ch 1) ...
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... DS(on 0 °C A Single Pulse 0.01 0 – Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient (Ch 1) Si4972DY Vishay Siliconix 125 ° ° – Gate-to-Source Voltage (V) GS On-Resistance vs ...
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... Si4972DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4.0 3.2 2.4 1.6 0.8 0 – Case Temperature (°C) C Power Derating, Junction-to-Foot (Ch 1) *The power dissipation P is based 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases ...
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... Normalized Thermal Transient Impedance, Junction-to-Case (Ch 1) Document Number: 73849 S-62660–Rev. C, 25-Dec- Square Wave Pulse Duration (sec Square Wave Pulse Duration (sec) Si4972DY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 120 ° ...
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... Si4972DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.0 0.5 1.0 V – Drain-to-Source Voltage (V) GS Output Characteristics (Ch 2) 0. 0.05 0. – Drain Current (A) D On-Resistance vs. Drain Current Gate Voltage ( ...
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... °C A Single Pulse 0.01 0 – Drain-to-Source Voltage ( minimum V at which r is specified GS GS DS(on) Safe Operating Area, Junction-to-Ambient (Ch 2) Si4972DY Vishay Siliconix 125 ° ° – Gate-to-Source Voltage (V) GS 0.01 0.1 1 Time (sec) ...
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... Si4972DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted – Case Temperature (°C) C Current Derating* (Ch 2) 1.5 1.2 0.9 0.6 0.3 0 – Case Temperature (°C) C Power Derating, Junction-to-Ambient (Ch 2) *The power dissipation P is based 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases ...
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... Document Number: 73849 S-62660–Rev. C, 25-Dec- Pulse Time (sec Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case (Ch 2) Si4972DY Vishay Siliconix Notes Duty Cycle Per Unit Base = R ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...