si4974dy Vishay, si4974dy Datasheet

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si4974dy

Manufacturer Part Number
si4974dy
Description
Dual N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si4974dy-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si4974dy-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 73052
S-61086-Rev. C, 19-Jun-06
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
Channel-1
Channel-2
Ordering Information: Si4974DY-T1-E3 (Lead (Pb)-free)
V
G
G
S
S
DS
30
1
1
2
2
(V)
1
2
3
4
0.026 at V
0.048 at V
0.019 at V
0.035 at V
Top View
J
a
= 150 °C)
SO-8
a
Dual N-Channel 30-V (D-S) MOSFET
r
DS(on)
GS
GS
GS
GS
(Ω)
a
= 4.5 V
= 4.5 V
= 10 V
= 10 V
8
7
6
5
D
D
D
D
Steady State
Steady State
a
L = 0.1 mH
1
1
2
2
T
T
T
T
t ≤ 10 sec
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
A
New Product
= 25 °C, unless otherwise noted
I
D
8.0
6.9
6.0
5.0
(A)
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
DM
I
I
thJA
thJF
AS
DS
GS
AS
D
S
D
stg
FEATURES
APPLICATIONS
• TrenchFET
• 100 % R
• Logic DC/DC
G
- Notebook PC
10 sec
1
8.0
6.5
1.8
1.3
Typ
2
50
90
30
Channel-1
Channel-1
N-Channel 1
MOSFET
g
40
15
11
Steady State
Tested
D
S
®
1
1
Power MOSFET
6.0
4.7
1.0
1.1
0.7
Max
62.5
110
40
- 55 to 150
± 20
30
10 sec
G
6.0
4.8
1.8
1.3
Typ
2
2
52
91
32
Channel-2
Channel-2
Vishay Siliconix
2.45
30
N-Channel 2
Steady State
7
MOSFET
D
S
Si4974DY
2
2
4.4
3.5
1.0
1.1
0.7
Max
62.5
110
40
www.vishay.com
RoHS
COMPLIANT
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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si4974dy Summary of contents

Page 1

... SO Top View Ordering Information: Si4974DY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Avalanche Energy a Maximum Power Dissipation ...

Page 2

... Si4974DY Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 73052 S-61086-Rev. C, 19-Jun- Si4974DY Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... Si4974DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C unless noted 150 ° 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.9 1.2 1 250 µ 100 125 150 100 Limited by r ...

Page 5

... Document Number: 73052 S-61086-Rev. C, 19-Jun- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Si4974DY Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...

Page 6

... Si4974DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C unless noted Drain-to-Source Voltage (V) DS Output Characteristics 0.10 0. 0.04 0.02 0. Drain Current (A) D On-Resistance vs. Drain Current 0.0 0.5 1.0 1.5 2.0 2 Total Gate Charge (nC) ...

Page 7

... D 75 100 125 150 100 Limited by r DS(on 0 °C C Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Safe Operating Area, Junction-to-Case Si4974DY Vishay Siliconix 0.10 0. 0.06 0.04 0.02 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...

Page 8

... Si4974DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C unless noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 9

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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