si4943bdy Vishay, si4943bdy Datasheet

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si4943bdy

Manufacturer Part Number
si4943bdy
Description
Dual P-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si4943bdy-T1-E3
Manufacturer:
Fairchild
Quantity:
370
Part Number:
si4943bdy-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si4943bdy-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 73073
S09-0704-Rev. C, 27-Apr-09
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 20
(V)
G
G
S
S
1
1
2
2
1
2
3
4
Si4943BDY -T1-E3
Si4943BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
Top View
0.031 at V
SO-8
0.019 at V
R
DS(on)
J
a
= 150 °C)
a
Dual P-Channel 20-V (D-S) MOSFET
GS
GS
8
7
6
5
= - 4.5 V
(Ω)
= - 10 V
(Lead (Pb)-free)
D
D
D
D
1
1
2
2
a
a
A
= 25 °C, unless otherwise noted
I
Steady State
Steady State
D
- 8.4
- 6.7
T
T
T
T
(A)
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Load Switching
• Battery Switching
Symbol
Symbol
T
R
R
Definition
- Computer
- Game Systems
- 2-Cell Li-Ion
J
V
V
I
G
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
1
stg
P-Channel MOSFET
g
Tested
D
S
®
1
1
Power MOSFET
Typical
10 s
- 8.4
- 6.7
- 1.7
2.0
1.3
46
85
26
- 55 to 150
± 20
- 20
- 30
Steady State
Maximum
G
2
- 6.3
- 5.1
- 0.9
62.5
110
1.1
0.7
35
Vishay Siliconix
P-Channel MOSFET
Si4943BDY
D
S
2
2
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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si4943bdy Summary of contents

Page 1

... Top View Ordering Information: Si4943BDY -T1-E3 (Lead (Pb)-free) Si4943BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... Si4943BDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Source-to-Drain V SD Source-Drain Diode Forward Voltage Document Number: 73073 S09-0704-Rev. C, 27-Apr- °C J 0.8 1.0 1.2 1.4 oltage (V) Si4943BDY Vishay Siliconix 2100 1800 C iss 1500 1200 900 600 C oss C rss 300 Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si4943BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 0 250 µA D 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 Limited DS(on D(on) 1 Limited °C A 0.1 Single Pulse BVDSS Limited ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73073. Document Number: 73073 S09-0704-Rev. C, 27-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4943BDY Vishay Siliconix www.vishay.com 10 5 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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