si4800dy Vishay, si4800dy Datasheet
si4800dy
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si4800dy Summary of contents
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... Top View Ordering Information: Si4800DY Si4800DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current (10 ms Pulse Width) ...
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... Si4800DY Vishay Siliconix MOSFET SPECIFICATIONS (T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...
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... 1200 1000 800 600 400 200 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 Si4800DY Vishay Siliconix Transfer Characteristics T = 125_C C 25_C - 55_C Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature ...
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... Si4800DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.6 0.4 = 250 0.2 - 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...