si4823dy Vishay, si4823dy Datasheet
si4823dy
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si4823dy Summary of contents
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... A SO Top View Ordering Information: Si4823DY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T = 150 °C) (MOSFET) J Pulsed Drain Current (MOSFET) Continuous Source-Drain Diode Current (MOSFET Diode Conduction) ...
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... Si4823DY Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET) Maximum Junction-to-Foot (Drain) (MOSFET Maximum Junction-to-Ambient (Schottky) Maximum Junction-to-Foot (Drain) (Schottky) Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board Based ° Maximum under Steady State conditions is 110 °C/W. ...
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... °C, unless otherwise noted A 2.0 1 1.2 GS 0.8 0 0.0 0 600 500 400 300 200 100 Si4823DY Vishay Siliconix Min. Typ. Max. Unit 0.46 0.50 0.41 0.50 0.025 0.1 0 ° ° 125 °C C 0.4 0.8 1.2 1 Gate-to-Source Voltage (V) ...
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... Si4823DY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 3 0.0 1.5 3.0 4 Total Gate Charge (nC) g Gate Charge 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.3 1 250 µA D 0.9 0.7 0 Temperature (°C) J Threshold Voltage www ...
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... It is used to determine the current rating, when this rating falls below the package limit. Si4823DY Vishay Siliconix 100 ...
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... Si4823DY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com °C, unless otherwise noted Square Wave Pulse Duration ( Square Wave Pulse Duration (s) ...
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... S09-0763-Rev. B, 04-May- °C, unless otherwise noted 0.1 100 125 75 150 0.0 250 200 150 100 Drain-to-Source Voltage (V) DS Capacitance Si4823DY Vishay Siliconix T = 150 ° °C J 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 Forward Voltage Drop (V) F Forward Voltage Drop 25 30 www.vishay.com 1.0 7 ...
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... Si4823DY Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS T 1 0.1 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.02 0.05 0.1 0.1 0.05 0.02 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...