si4822dy Fairchild Semiconductor, si4822dy Datasheet

no-image

si4822dy

Manufacturer Part Number
si4822dy
Description
Single N-channel, Logic Level, Powertrench Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si4822dy-NL
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si4822dy-T1-E3
Manufacturer:
VISHAY
Quantity:
12 935
Part Number:
si4822dy-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si4822dy-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
Si4822DY
Single N-Channel, Logic Level, PowerTrench MOSFET
This N-Channel
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
D
Absolute Maximum Ratings
J
GeneralDescription
DSS
GSS
D
© 2001 Fairchild Semiconductor International
,T
JA
JC
STG
SOT-23
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Power Dissipation for Single Operation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
SO-8
Logic
D
- Pulsed
SuperSOT
D
Level MOSFET is produced
pin 1
TM
-6
S
T
A
= 25
S
o
SuperSOT
S
C unless other wise noted
(Note 1b)
(Note 1c)
(Note 1a)
G
(Note 1a)
(Note 1a)
(Note 1)
TM
-8
Features
12.5 A, 30 V. R
Fast switching speed.
Low gate charge.
High performance trench technology for
extremely low R
High power and current handling capability.
SO-8
5
6
7
8
R
Si4822DY
DS(ON)
-55 to 150
DS(ON)
DS(ON)
±20
12.5
2.5
1.2
30
50
25
50
1
SOT-223
= 0.0095
= 0.013
.
@ V
@ V
GS
GS
January 2001
= 4.5 V.
= 10 V
2
1
3
SOIC-16
4
Si4822DY Rev.A
°C/W
°C/W
Units
°C
W
V
V
A

Related parts for si4822dy

si4822dy Summary of contents

Page 1

... SO unless other wise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) January 2001 = 0.0095 @ DS(ON 0.013 @ V = 4.5 V. DS(ON DS(ON) SOIC-16 SOT-223 Si4822DY 30 ±20 12.5 50 2.5 1.2 1 -55 to 150 50 25 Si4822DY Rev.A Units °C °C/W °C/W ...

Page 2

... J 0.0105 0.013 25 35 2180 500 255 2.1 0.72 1.2 (Note 125 C 0.006 in of 2oz copper. Units µA µ pad Si4822DY Rev.A ...

Page 3

... DRAIN CURRENT (A) D Drain Current and Gate Voltage 6.3A D 125°C 25° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. Si4822DY Rev 1.2 ...

Page 4

... GS 0.2 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =125°C 25°C A 0.01 0 SINGLE PULSE TIME (SEC) Dissipation. R ( 125°C/W JA P(pk ( Duty Cycle 100 300 30 100 300 Si4822DY Rev.A ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...

Related keywords