si4825dy Vishay, si4825dy Datasheet

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si4825dy

Manufacturer Part Number
si4825dy
Description
P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Manufacturer
Quantity
Price
Part Number:
SI4825DY
Manufacturer:
TIP
Quantity:
1 075
Part Number:
SI4825DY
Manufacturer:
SILICONIX
Quantity:
20 000
Part Number:
si4825dy-T1-E3
Manufacturer:
VISHAY
Quantity:
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Part Number:
si4825dy-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
si4825dy-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
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Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71291
S-70138-Rev. C, 22-Jan-07
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
Ordering Information: Si4825DY-T1
- 30
DS
(V)
G
S
S
S
1
2
3
4
0.022 at V
0.014 at V
Top View
r
SO-8
DS(on)
Si4825DY-T1-E3 (Lead (Pb)-free)
J
a
= 150 °C)
GS
a
GS
(Ω)
= - 4.5 V
= - 10 V
P-Channel 30-V (D-S) MOSFET
8
7
6
5
a
D
D
D
D
a
- 11.5
A
I
D
- 9.2
= 25 °C, unless otherwise noted
(A)
Steady State
Steady State
T
T
T
T
t ≤ 10 sec
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• TrenchFET
• 100 % R
Symbol
Symbol
T
R
R
J
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
G
stg
P-Channel MOSFET
g
Tested
®
S
D
Power MOSFETs
Typical
10 sec
- 11.5
- 9.2
- 2.5
3.0
1.9
32
68
15
- 55 to 150
± 25
- 30
- 50
Steady State
Maximum
- 8.1
- 6.5
- 1.3
1.5
0.9
42
85
18
Vishay Siliconix
Si4825DY
www.vishay.com
°C/W
Unit
Unit
RoHS*
COMPLIANT
°C
W
V
A
Available
Pb-free
1

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si4825dy Summary of contents

Page 1

... SO Top View Ordering Information: Si4825DY-T1 Si4825DY-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4825DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... V – Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71291 S-70138-Rev. C, 22-Jan- °C J 0.8 1.0 1.2 Si4825DY Vishay Siliconix 5000 4000 C iss 3000 2000 C oss 1000 C rss – Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si4825DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 0.8 I 0.6 0.4 0.2 0.0 - 0 – Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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