si4836dy Vishay, si4836dy Datasheet
si4836dy
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si4836dy Summary of contents
Page 1
... T = 70_C stg Symbol sec R R thJA Steady State Steady State R thJF Si4836DY Vishay Siliconix FEATURES D TrenchFETr Power MOSFET D PWM Optimized D 100% R Tested G APPLICATIONS D Low Voltage Synchronous Rectfication D Low Voltage LDO Pass Transistor N-Channel MOSFET 10 secs Steady State 12 " ...
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... Si4836DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...
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... V - Source-to-Drain Voltage (V) SD Document Number: 71692 S-03662—Rev. D, 14-Apr-03 New Product 0.8 1.0 1.2 Si4836DY Vishay Siliconix Capacitance 8000 6400 C iss 4800 C oss 3200 C rss 1600 Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...
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... Si4836DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 mA D -0.0 -0.2 -0.4 -0.6 -50 - Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...