si4835bdy Vishay, si4835bdy Datasheet
si4835bdy
Manufacturer Part Number
si4835bdy
Description
P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet
1.SI4835BDY.pdf
(6 pages)
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Company:
Part Number:
SI4835BDY
Manufacturer:
VISHAY
Quantity:
365
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SI4835BDY
Manufacturer:
SI
Quantity:
20 000
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Part Number:
si4835bdy-T1
Manufacturer:
MARVELL
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Part Number:
si4835bdy-T1-E3
Manufacturer:
VISHAY
Quantity:
29 190
Part Number:
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Manufacturer:
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Quantity:
20 000
Part Number:
si4835bdy-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
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Notes
a.
Document Number: 72029
S-41912—Rev. D, 25-Oct-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
−30
−30
(V)
J
ti
Ordering Information: Si4835BDY
0.030 @ V
0.018 @ V
t A bi
r
DS(on)
J
J
a
a
G
GS
S
S
S
GS
= 150_C)
= 150_C)
t
a
a
= −4.5 V
= −10 V
(W)
Parameter
Parameter
1
2
3
4
a
a
Si4835BDY-T1 (with Tape and Reel)
Si4835BDY—E3 (Lead (Pb)-Free)
Si4835BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
Top View
P-Channel 30-V (D-S) MOSFET
SO-8
a
I
D
−9.6
−7.5
(A)
8
7
6
5
A
D
D
D
D
= 25_C UNLESS OTHERWISE NOTED)
Q
Steady State
Steady State
t v 10 sec
g
T
T
T
T
A
A
A
A
−25
−25
(Typ)
= 25_C
= 70_C
= 25_C
= 70_C
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
stg
FEATURES
D TrenchFETr Power MOSFET
D Advanced High Cell Density Process
D 100% R
APPLICATIONS
D Load Switches
− Notebook PCs
− Desktop PCs
10 secs
Typical
−9.6
−7.7
−2.1
2.5
1.6
39
70
18
g
G
Tested
−55 to 150
P-Channel MOSFET
"25
−30
−50
Steady State
Maximum
S
D
Vishay Siliconix
−7.4
−5.9
−1.3
1.5
0.9
50
85
22
Si4835BDY
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1
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