si4459ady Vishay, si4459ady Datasheet

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si4459ady

Manufacturer Part Number
si4459ady
Description
P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 80 °C/W.
d. Based on T
Document Number: 69979
S-80890-Rev. A, 21-Apr-08
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot
PRODUCT SUMMARY
V
DS
- 30
(V)
Ordering Information: Si4459ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
C
0.00775 at V
= 25 °C.
0.005 at V
G
S
S
S
R
DS(on)
1
2
3
4
GS
GS
J
(Ω)
= - 10 V
Top View
= - 4.5 V
= 150 °C)
SO-8
a, c
P-Channel 30-V (D-S) MOSFET
8
7
6
5
I
D
- 29
- 23
(A)
D
D
D
D
d
A
Q
= 25 °C, unless otherwise noted
g
61 nC
Steady State
(Typ.)
New Product
t ≤ 10 s
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Adaptor Switch
• Notebook
Symbol
R
R
thJA
thJF
Symbol
T
J
V
V
E
I
I
P
, T
I
DM
I
AS
DS
GS
AS
D
S
D
g
stg
Tested
®
Power MOSFET
Typical
G
29
13
P-Channel MOSFET
S
D
- 55 to 150
- 19.7
- 15.6
- 2.9
3.5
2.2
- 23.5
Limit
± 20
- 6.5
Maximum
- 30
- 29
- 70
- 30
7.8
5.0
45
a, b
a, b
a, b
a, b
a, b
Vishay Siliconix
35
16
Si4459ADY
www.vishay.com
°C/W
Unit
RoHS
COMPLIANT
Unit
mJ
°C
W
V
A
1

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si4459ady Summary of contents

Page 1

... Top View Ordering Information: Si4459ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy ...

Page 2

... Si4459ADY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Document Number: 69979 S-80890-Rev. A, 21-Apr-08 New Product 4.0 3.2 2.4 1 0.8 0 9000 7200 5400 3600 1800 1.6 1 1.2 1.0 0.8 0.6 90 120 150 Si4459ADY Vishay Siliconix T = 125 ° ° °C C 0.0 0.8 1.6 2.4 3 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...

Page 4

... Si4459ADY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.8 0.6 0.4 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.030 0.024 °C J 0.018 0.012 0.006 0.000 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.0 1.6 1.2 0.8 0.4 0.0 100 125 150 0 = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4459ADY Vishay Siliconix 125 150 100 125 T - Case Temperature (°C) C Power Derating, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si4459ADY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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